Reaction Bonded Silicon Carbide

RBSiC or SiSiC has high strength, high thermal conductivity, and low porosity (<0.1%). It is gas tight, and can conduct electricity. It is highly resistant to oxidation, impacting of rapid cooling or heating, and shaking. No oxidation and bending deformation occur at high temperature for long-term use.

Specifications:

• Density (g/cm³) : 2.95
• Open Porosity (%) : <0.5%
• Bending Strength (MPa), at 1200°C: 450
• Elastic Modulus (GPa) : 420
• Thermal Conductivity (W/mk): 90
• Coefficient of thermal expansion (ppm/°C): 2
• Upper using temperature (°C): 1700